Title :
Wide range tunable laterally coupled distributed-feedback lasers based on InGaAs-GaAs quantum dots
Author :
Müller, M. ; Klopf, F. ; Kamp, M. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Nanoplus Nanosystems & Technol. GmbH, Gerbrunn, Germany
Abstract :
The authors have investigated tunable distributed feedback (DFB) lasers based on InGaAs quantum dots grown by molecular beam epitaxy. Two-section tunable DFB lasers were fabricated by patterning laterally gain coupling binary superimposed gratings perpendicular to the ridge waveguide. Side-mode suppression ratios of up to 40 dB have been achieved. The tuning range covers 30 nm.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser tuning; molecular beam epitaxial growth; quantum well lasers; semiconductor quantum dots; InGaAs-GaAs; InGaAs-GaAs quantum dots; gain coupling; laterally gain coupling binary superimposed grating patterning; molecular beam epitaxy; multiple-peak gratings; multisection diode lasers; ridge waveguide; side-mode suppression ratios; tuning range; two-section tunable DFB lasers; wide range tunable laterally coupled distributed-feedback lasers; Distributed feedback devices; Gratings; Indium gallium arsenide; Laser feedback; Laser tuning; Molecular beam epitaxial growth; Optical coupling; Quantum dot lasers; Tunable circuits and devices; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.801103
