Title :
Ultralow threshold 1.3-μm InGaAsP-InP compressive-strained multiquantum-well monolithic laser array for parallel high-density optical interconnects
Author :
Uomi, K. ; Tsuchiya, T. ; Komori, M. ; Oka, A. ; Kawano, T. ; Oishi, A.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
An ultralow-threshold 1.3-μm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained multiquantum-well active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active laser width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3±0.09 mA and slope efficiency of 0.37±0.01 W/A), extremely low operating current of 14 mA under 5-mW output power, and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system. In addition, a record low CW threshold current of 0.58 mA at 20°C and 1.62 mA at 90°C, as a long-wavelength laser, is obtained by employing a short cavity (100 μm) uith high-reflection coatings
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser cavity resonators; optical films; optical interconnections; parallel architectures; quantum well lasers; semiconductor device reliability; semiconductor laser arrays; 0.58 mA; 1.3 mA; 1.3 mum; 1.62 mA; 100 mum; 14 mA; 20 C; 5 mW; 90 C; InGaAsP-InP; InGaAsP-InP compressive-strained multiquantum-well monolithic laser array; active laser width; barrier thickness; extremely low operating current; high-reflection coatings; highly uniform threshold current; light sources; long-term reliability; long-wavelength laser; low CW threshold current; optimization; output power; parallel high-density optical interconnection system; parallel high-density optical interconnects; short cavity; slope efficiency; strain; strained multiquantum-well active layer; ultralow threshold; well thickness; Capacitive sensors; Laser theory; Optical arrays; Optical fiber communication; Optical interconnections; Quantum well devices; Semiconductor laser arrays; Substrates; Threshold current; Ultraviolet sources;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401198
