Title :
Efficient frequency-domain simulation technique for short-channel MOSFET
Author :
Lee, Kyu-Il ; Lee, Chanho ; Shin, Hyungsoon ; Park, Young June ; Min, Hong Shick
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea
fDate :
6/1/2005 12:00:00 AM
Abstract :
This paper proposes and investigates a short-channel MOSFET model down to a 0.1-μm regime for the frequency-domain analysis of the device operation through the harmonic balance technique. The efficiency and the preciseness of our method are validated by comparison of simulation results with the two-dimensional time-domain simulation tool, MEDICI. Along with the carrier transport model, the displacement current components are included in the terminal current equations for the extended analysis under external circuit environments.
Keywords :
MOSFET; circuit simulation; frequency-domain analysis; semiconductor device models; time-domain analysis; 0.1 micron; MEDICI; carrier transport model; displacement current components; extended analysis; frequency-domain simulation; harmonic balance; harmonic distortion; nonquasistatic effect; short-channel MOSFET; terminal current equations; time-domain simulation; Analytical models; Circuit simulation; Computational modeling; Frequency domain analysis; Harmonic analysis; Harmonic distortion; MOSFET circuits; Medical simulation; Semiconductor device modeling; Time domain analysis; Harmonic balance (HB) technique; harmonic distortion; nonquasistatic (NQS) effect; short-channel MOSFET;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.2005.847896
