Silicon monolithic millimetre-wave integrated circuits

Author

Luy, J.F. ; Strohm, K.M. ; Buechler, J. ; Russer, P.

Author_Institution

Daimler-Benz Res. Center, Stuttgart, Germany

Volume

139

Issue

3

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

209

Lastpage

216

Abstract

Using silicon as the substrate material, silicon monolithic millimetre-wave integrated circuit (SIMMWIC) oscillators and receivers are successfully realised. For the coplanar oscillators, a slot is used as the resonant structure in which a monolithically integrated IMPATT diode, selectively grown by silicon molecular beam epitaxy (Si-MBE), acts as the negative resistance device. Pulsed and CW operation of the planar oscillators is achieved in the 90 GHz region. The output power is radiated directly from the resonant slot. Complete receivers, with monolithic Schottky diodes together with the antenna, are integrated on a single chip. The suitability of the chips for near-range measurements is pointed out

Keywords

MMIC; elemental semiconductors; microwave oscillators; molecular beam epitaxial growth; receivers; silicon; 90 GHz; CW operation; EHF; IMPATT diode; MIMIC; Si; antenna; molecular beam epitaxy; monolithic Schottky diodes; monolithic millimetre-wave integrated circuits; near-range measurements; negative resistance device; oscillators; output power; pulsed operation; receivers; resonant slot; semiconductors; substrate material;

fLanguage

English

Journal_Title

Microwaves, Antennas and Propagation, IEE Proceedings H

Publisher

iet

ISSN

0950-107X

Type

jour

Filename

143288