Title :
Silicon monolithic millimetre-wave integrated circuits
Author :
Luy, J.F. ; Strohm, K.M. ; Buechler, J. ; Russer, P.
Author_Institution :
Daimler-Benz Res. Center, Stuttgart, Germany
fDate :
6/1/1992 12:00:00 AM
Abstract :
Using silicon as the substrate material, silicon monolithic millimetre-wave integrated circuit (SIMMWIC) oscillators and receivers are successfully realised. For the coplanar oscillators, a slot is used as the resonant structure in which a monolithically integrated IMPATT diode, selectively grown by silicon molecular beam epitaxy (Si-MBE), acts as the negative resistance device. Pulsed and CW operation of the planar oscillators is achieved in the 90 GHz region. The output power is radiated directly from the resonant slot. Complete receivers, with monolithic Schottky diodes together with the antenna, are integrated on a single chip. The suitability of the chips for near-range measurements is pointed out
Keywords :
MMIC; elemental semiconductors; microwave oscillators; molecular beam epitaxial growth; receivers; silicon; 90 GHz; CW operation; EHF; IMPATT diode; MIMIC; Si; antenna; molecular beam epitaxy; monolithic Schottky diodes; monolithic millimetre-wave integrated circuits; near-range measurements; negative resistance device; oscillators; output power; pulsed operation; receivers; resonant slot; semiconductors; substrate material;
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings H
