Title :
Edge emitting laser structure using electrical connection to the optical confinement layers
Author :
Boche, B. ; Müller, R. ; Böhm, G. ; Tränkle, G. ; Weimann, G.
Author_Institution :
Lehrstuhl fur Technische Elektronik, Tech. Univ. Munchen, Germany
fDate :
2/15/1996 12:00:00 AM
Abstract :
The authors describe the fabrication and characterisation of a cladding layer contacted laser (CLCL) integrated into GaAs/AlGaAs-epitaxial layers with a pnp-doped structure. Threshold current densities of 0.86 kA/cm2 and a CW operation of more than 20 mW optical power are achieved with this structure, allowing the integration of a CLCL with a directional coupler
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; semiconductor lasers; 20 mW; CW operation; GaAs-AlGaAs; GaAs/AlGaAs-epitaxial layers; cladding layer contacted laser; directional coupler; edge emitting laser; electrical connection; fabrication; integration; optical confinement layers; optical power; pnp-doped structure; threshold current densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960228
