Title :
Hole transport in SiO2 and reoxidized nitrided SiO2 gate insulators at low temperature [FETs]
Author :
Boesch, H. Edwin, Jr. ; Dunn, Gregory J.
Author_Institution :
Harry Diamond Lab., Adelphi, MD, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Charge generation and hole transport were measured in reoxidized nitrided (RNO) and radiation-hard thermal oxide (OX) as a function of temperature from 77 to 295 K and applied field from 1 to 5 MV/cm using pulsed irradiation and a fast time-resolved current-voltage (I- V) measurement technique. The insulators show near-equal charge generation at 77 K and qualitatively similar dispersive hole transport with markedly different and strongly field-dependent activation energies. High-field acceleration of hole transport may be a useful radiation-hardening technique for low-temperature operation; RNO has advantages over OX for application of this technique
Keywords :
electron beam effects; high field effects; insulated gate field effect transistors; insulating thin films; nitridation; oxidation; radiation hardening (electronics); semiconductor-insulator boundaries; silicon compounds; 77 to 295 K; MOSFET; SiO2; SiOxNy; charge generation; electron irradiation; fast time resolved I-V measurement; field-dependent activation energies; gate insulators; high field acceleration; hole transport; low-temperature operation; pulsed irradiation; radiation-hard thermal oxide; radiation-hardening technique; reoxidized nitrided oxide; Charge carrier processes; Electron traps; FETs; Insulation; Ionizing radiation; Linear particle accelerator; Nitrogen; Spontaneous emission; Temperature; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
