DocumentCode :
815853
Title :
Novel Dielectric-Constant Evaluation Method for Low- 
Multilevel Metallization Structures in ULSI
Author :
Takimoto, Yoshio ; Maeda, Nobuhide
Author_Institution :
Consortium for Adv. Semicond. Mater. & Related Technol. (CASMAT), Tokyo
Volume :
22
Issue :
2
fYear :
2009
fDate :
5/1/2009 12:00:00 AM
Firstpage :
317
Lastpage :
320
Abstract :
Precise evaluation of the dielectric constants of low-k interlayer dielectrics in ULSI is essential in order to analyze the effects of their fabrication process and their structure on their k -values. However, this is difficult to achieve in complicated multilayer structures with various kinds of stacked films having different physical properties. To address this problem, we have developed a novel evaluation method that makes it possible to precisely analyze the effects of structure and fabrication process on the k -values of dielectrics.
Keywords :
ULSI; integrated circuit metallisation; low-k dielectric thin films; multilayers; permittivity; ULSI; dielectric-constant evaluation method; fabrication process; low-k multilevel metallization structure; Capacitance; Capacitors; Dielectric constant; Dielectric materials; Equations; Fabrication; Nonhomogeneous media; Testing; Ultra large scale integration; Wiring; $k$ $k$ $k$ $k$
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2009.2017630
Filename :
4909533
Link To Document :
