Title :
High-efficiency power amplifier design including input harmonic termination
Author :
Gao, S. ; Butterworth, P. ; Ooi, S. ; Sambell, A.
Author_Institution :
Active Antenna Group, Northumbria Univ., Newcastle upon Tyne, UK
Abstract :
This letter presents the design of a high-efficiency Class-F power amplifier in pseudomorphic high electron mobility transistor technology using a novel load-pull/source-pull simulation-based approach. The second harmonic input termination is shown to have a critical influence on performance, which is justified by the shape of the simulated waveforms. Experimental validation is carried out on a 2-GHz practical circuit using a medium-power packaged device. Two cases are compared both theoretically and experimentally: for the best and worst case second harmonic input terminations, 76% and 42% saturated power-added efficiency are measured, respectively. In addition, the worst case termination degrades the saturated C/I3 by 7.5dB.
Keywords :
HEMT integrated circuits; UHF field effect transistors; UHF power amplifiers; power HEMT; 2 GHz; harmonic tuning; input harmonic termination; load-pull simulation; medium-power packaged device; power amplifier design; power-added efficiency; pseudomorphic high electron mobility transistor; source-pull simulation; Circuit simulation; Degradation; Electron mobility; HEMTs; High power amplifiers; MODFETs; PHEMTs; Packaging; Power system harmonics; Shape; Class-F; harmonic tuning; high-efficiency; power amplifier (PA);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.863171
