• DocumentCode
    815944
  • Title

    Charge Carrier Transport Properties of Semiconductor Materials Suitable for Nuclear Radiation Detectors

  • Author

    Ottaviani, G. ; Canali, C. ; Quaranta, A.Alberigi

  • Author_Institution
    Istituto di Fisica dell ´´UniversitÃ\xa0, Via Vivaldi 70, 41100 Modena, Italy and I.N.F.N., Sezione Bologna, Italy
  • Volume
    22
  • Issue
    1
  • fYear
    1975
  • Firstpage
    192
  • Lastpage
    204
  • Abstract
    Charge carrier drift velocities in semiconductor materials suitable for solid state detectors has been reviewed. Si, Ge, CdTe and GaAs are considered. New data for HgI2 recently obtained are also reported. The data cover a large range of temperatures (6-430 K) and electric fields up to 50 KV/cm. An anisotropy effect in the drift velocity obtained by applying the electric field parallel to different crystallographic axis is also discussed for the case of Si and Ge.
  • Keywords
    Charge carriers; Electron mobility; Gallium arsenide; Plasma properties; Plasma temperature; Radiation detectors; Semiconductor materials; Semiconductor radiation detectors; Solid state circuits; Timing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1975.4327640
  • Filename
    4327640
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=815944