DocumentCode
815953
Title
Prognosis for High-Z Semiconductor Detectors
Author
Swierkowski, S.P. ; Armantrout, G.A.
Author_Institution
Lawrence Livermore Laboratory, University of California Livermore, Califoria 94550
Volume
22
Issue
1
fYear
1975
Firstpage
205
Lastpage
210
Abstract
Considerable interest has been generated recently in the use of high-Z semiconductors for x-ray spectroscopy. To aid in this study, a Monte-Carlo computational model has been used to simulate x-ray spectral response in semiconductor detectors. The model employs one-dimensional charge collection in an arbitrary electric field profile and includes trapping and electronics system effects. Spectra are calculated for several materials, including HgI2 and CdTe, and are compared to experimental results.
Keywords
Computational modeling; Electron traps; Germanium; Photonic band gap; Predictive models; Semiconductor device noise; Semiconductor materials; Temperature; X-ray detection; X-ray detectors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1975.4327641
Filename
4327641
Link To Document