Title :
Prognosis for High-Z Semiconductor Detectors
Author :
Swierkowski, S.P. ; Armantrout, G.A.
Author_Institution :
Lawrence Livermore Laboratory, University of California Livermore, Califoria 94550
Abstract :
Considerable interest has been generated recently in the use of high-Z semiconductors for x-ray spectroscopy. To aid in this study, a Monte-Carlo computational model has been used to simulate x-ray spectral response in semiconductor detectors. The model employs one-dimensional charge collection in an arbitrary electric field profile and includes trapping and electronics system effects. Spectra are calculated for several materials, including HgI2 and CdTe, and are compared to experimental results.
Keywords :
Computational modeling; Electron traps; Germanium; Photonic band gap; Predictive models; Semiconductor device noise; Semiconductor materials; Temperature; X-ray detection; X-ray detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1975.4327641
