• DocumentCode
    815954
  • Title

    Characterization of erbium-silicided Schottky diode junction

  • Author

    Jang, Moongyu ; Kim, Yarkyeon ; Shin, Jaeheon ; Lee, Seongjae

  • Author_Institution
    Future Technol. Res. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
  • Volume
    26
  • Issue
    6
  • fYear
    2005
  • fDate
    6/1/2005 12:00:00 AM
  • Firstpage
    354
  • Lastpage
    356
  • Abstract
    Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5×1013 traps/cm2, 3.75 ms and 0.76 eV, respectively. By using the developed method, the interface of the Schottky diode can be evaluated quantitatively.
  • Keywords
    Schottky barriers; Schottky diodes; equivalent circuits; erbium compounds; ErSiO2; Schottky barrier height; Schottky diode interface; equivalent circuit method; erbium-silicided Schottky diode junction; trap density; Current measurement; Electron traps; Equivalent circuits; MOSFETs; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicides; Silicon; Temperature; Equivalent circuit; Schottky diode; erbium-silicide; trap;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2005.848074
  • Filename
    1432897
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=815954