Uncertainty Analysis of Two-Step and Three-Step Methods for Deembedding On-Wafer RF Transistor Measurements

In order to investigate the deembedding uncertainties in the most commonly used deembedding methods, f_max and f_T deembedded from two- and three-step ones are compared with those of an accurate pad-open-short technique requiring an additional pad open pattern. The lower f_max and higher f_T values from these deembedding methods than those of the pad-open-short technique considering the distributed effect are obtained in an actual MOSFET with Lg = 0.13 mum. The deembedding uncertainty of two- and three-step methods is reduced without the pad open pattern by a simple deembedding technique using extrinsic and intrinsic admittances in specific splitting fractions.