Use of silicon bipolar transistors as sensors for neutron energy spectra determinations

Recent reevaluation of the neutron displacement damage function for silicon qualifies it as a sensor for spectra determinations. This development is especially useful in the critical energy region from 0.2 to 2.0 MeV where, in the absence of fission foils, there is a shortage of response functions needed to define spectra satisfactorily. How silicon bipolar devices can be used to improve neutron spectra determinations and therefore to better predict the displacement damage induced in devices is described