Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices

Author

Shaneyfelt, M.R. ; Fleetwood, D.M. ; Schwank, J.R. ; Hughes, K.L.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1187

Lastpage

1194

Abstract

The radiation response of MOS devices exposed to ⁶⁰Co and low-energy (~10 keV) X-ray irradiation is evaluated as a function of electric field during exposure. Improved charge yield estimates are obtained for ⁶⁰Co irradiations at fields below 1 MV/cm by matching voltage shifts due to oxide-trap and interface-trap charge to an E^-0.55 electric field dependence. Combining these improved charge yield estimates and calculated dose enhancement factors, the relative response of X-ray to ⁶⁰Co irradiations is accurately predicted for oxide electric fields from 0.03 MV/cm to 5.0 MV/cm. The ability to predict the relative response to X-ray to ⁶⁰Co irradiations-should speed acceptance of X-ray testers as a hardness assurance tool

Keywords

X-ray effects; electron-hole recombination; gamma-ray effects; insulated gate field effect transistors; interface electron states; semiconductor device testing; 10 keV; MOS devices; MOS transistors; X-ray irradiation; X-ray testers; charge yield; dose enhancement factors; electric field dependence; electron hole recombination; gamma irradiation; hardness assurance tool; interface-trap charge; oxide-trap; radiation response; voltage shifts; Annealing; Costs; Ionizing radiation; Isolation technology; Laboratories; MOS devices; Spontaneous emission; Testing; Voltage; Yield estimation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124092

Filename

124092