DocumentCode
816062
Title
Nuclear and damage effects in Si produced by irradiations with medium energy protons
Author
Alurralde, M. ; Victoria, M. ; Caro, A. ; Gavillet, D.
Author_Institution
Paul Scherrer Inst., Villigen, Switzerland
Volume
38
Issue
6
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
1210
Lastpage
1215
Abstract
Calculations have been performed to obtain the types of ions and their recoil energies that result from the irradiation of Si with intermediate energy (70-600-MeV) protons. A version of the High Energy Transport Code (HETC) was employed for this purpose. A first dosimetry measurement confirms the production of Na and Be as a result of the irradiation. The binary collision approximation, as used in the MARLOWE code, is then used to estimate the density of defect clusters in the resulting damaged structure
Keywords
dosimetry; elemental semiconductors; proton effects; silicon; 70 to 600 MeV; Be ions; HETC; High Energy Transport Code; MARLOWE code; Na ions; Si; binary collision approximation; damage effects; defect cluster density; dosimetry; medium energy protons; proton irradiation; recoil energies; DRAM chips; Dosimetry; Extraterrestrial measurements; Ionization; Neutrons; Nuclear electronics; Production; Protons; Random access memory; Single event upset;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.124095
Filename
124095
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