Title :
New algorithms for circuit simulation of device breakdown
Author :
Dìaz, Carlos H. ; Kang, Sung-Mo
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
11/1/1992 12:00:00 AM
Abstract :
Numerical algorithms that enable extension of device models into avalanche breakdown region without disturbing the convergence of modified nodal-analysis-based circuit simulators are introduced. Details of model implementation into circuit simulators are presented along with applications. In particular, circuit-level simulation of nondestructive electrostatic discharge phenomena is discussed along with the time-step size on the simulation of negative resistance structures
Keywords :
circuit analysis computing; digital simulation; electrostatic discharge; impact ionisation; negative resistance; semiconductor device models; ESD; avalanche breakdown region; circuit simulation; circuit-level simulation; device breakdown; device models; negative resistance structures; nodal-analysis-based circuit simulators; nondestructive electrostatic discharge phenomena; Avalanche breakdown; Breakdown voltage; Circuit simulation; Computational modeling; Convergence; Diodes; Electric breakdown; Electrostatic discharge; Impact ionization; SPICE;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
