An 18-GHz 300-mW SiGe power HBT

Author

Zhenqiang Ma ; Ningyue Jiang ; Guogong Wang ; Alterovitz, S.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Wisconsin, Madison, WI, USA

Volume

26

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

381

Lastpage

383

Abstract

An 18-GHz, 300-mW SiGe power heterojunction bipolar transistor (HBT) is demonstrated. The optimization of SiGe HBT vertical profile has enabled this type of devices to operate with high gain and high power at this high frequency. In the common-base configuration, a continuous wave output power of 24.73 dBm with a power gain of 4.5 dB was measured from a single 20-emitter stripe SiGe (2×30 μm² of each emitter finger) double HBT. The overall performance characteristics represent the state-of-the-art SiGe power HBTs operating in the K-band frequency range.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 18 GHz; 300 mW; 4.5 dB; HBT vertical profile optimization; K-band frequency range; SiGe; continuous wave output power; power HBT; power heterojunction bipolar transistor; single 20-emitter stripe double HBT; CMOS technology; Doping; Frequency; Gain measurement; Germanium silicon alloys; Heterojunction bipolar transistors; K-band; Power generation; Power measurement; Silicon germanium; Common-base; SiGe; heterojunction bipolar transistors (HBTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.848619

Filename

1432906