DocumentCode
816108
Title
Neutron damage equivalence in GaAs
Author
Griffin, P.J. ; Kelly, J.G. ; Luera, T.F. ; Barry, A.L. ; Lazo, M.S.
Author_Institution
Sandia Nat. Lab., Albuquerque, NM, USA
Volume
38
Issue
6
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
1216
Lastpage
1224
Abstract
A 1-MeV neutron damage equivalence methodology and damage function have been developed for GaAs based on a recoil-energy dependent damage efficiency and the displacement kerma. This method, developed using lifetime degradationIn GaAs LEDs in a variety of neutron spectra, is also shown to be applicable to carrier removal. A validated methodology, such as this, is required to ensure and evaluate simulation fidelity in the neutron testing of GaAs semiconductors
Keywords
III-V semiconductors; gallium arsenide; light emitting diodes; neutron effects; semiconductor device testing; 1 MeV; GaAs; LEDs; carrier removal; damage function; displacement kerma; lifetime degradation; neutron damage equivalence methodology; neutron testing; recoil-energy dependent damage efficiency; simulation fidelity; Current measurement; Electronic equipment testing; Frequency measurement; Gallium arsenide; Inductors; Light emitting diodes; Neutrons; Semiconductor device testing; Semiconductor diodes; Silicon;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.124096
Filename
124096
Link To Document