Hot-carrier effects in P-channel modified Schottky-barrier FinFETs

High-performance p-channel modified Schottky-barrier SOI FinFETs (MSB pFinFETs) with low temperature source/drain annealing process was recently suggested for future nano-scale devices. In this letter, the hot-carrier (HC) immunity of the MSB pFinFETs with different gate lengths (L_g) and fin widths (W_f) are presented. The experimental data shows that the MSB pFinFET with narrower W_f has less hot carrier degradation than that with wider W_f. The effects of electrical field in Si fins induced from lateral-gate electrode and the degree of uniformity of source/drain extension are illustrated cautiously by two-dimensional simulation and transmission electron microscopy (TEM) micrographs, respectively. It is found that the devices with narrower W_f have weaker electrical field from gate electrode and better uniformity of source/drain extension resulting in superior hot-carrier immunity. The projected operation voltage at ten years dc lifetime exceeds 1.6 V as the W_f is narrower than 60 nm. It is thus concluded that the MSB pFinFET would be a very promising nano device.