Title :
The effect of IrO2--IrO2--Hf--LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs
Author :
Yu, D.S. ; Liao, C.C. ; Cheng, C.F. ; Chin, A. ; Li, M.F. ; McAlister, S.P.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
6/1/2005 12:00:00 AM
Abstract :
We have studied the bias-temperature instability of three-dimensional self-aligned metal-gate/high-/spl kappa//Germanium-on-insulator (GOI) CMOSFETs, which were integrated on underlying 0.18 μm CMOSFETs. The devices used IrO2--IrO2-Hf dual gates and a high-/spl kappa/ LaAlO3 gate dielectric, and gave an equivalent-oxide thickness (EOT) of 1.4 nm. The metal-gate/high-/spl kappa//GOI p-and n-MOSFETs displayed threshold voltage (VT) shifts of 30 and 21 mV after 10 MV/cm, 85/spl deg/C stress for 1 h, comparable with values for the control two-dimensional (2-D) metal-gate/high-/spl kappa/-Si CMOSFETs. An extrapolated maximum voltage of -1.2 and 1.4 V for a ten-year lifetime was obtained from the bias-temperature stress measurements on the GOI CMOSFETs.
Keywords :
MOSFET; dielectric materials; germanium; hafnium; iridium compounds; lanthanum compounds; semiconductor-insulator boundaries; -1.2 V; 0.18 micron; 1.4 V; 1.4 nm; 21 mV; 30 mV; 3D GOI CMOSFET; 3D self-aligned metal-gate CMOSFET; IrO/sub 2/-IrO/sub 2/-Hf-LaAlO/sub 3/; bias-temperature instability; bias-temperature stress measurements; equivalent-oxide thickness; germanium-on-insulator CMOSFET; high-k CMOSFET; high-k gate dielectric; metal-gate high-k GOI n-MOSFET; metal-gate high-k GOI p-MOSFET; threshold voltage shifts; Atherosclerosis; CMOSFETs; Dielectric devices; Energy consumption; Hafnium; Implants; MOSFET circuits; Stress; Threshold voltage; Wafer bonding; Bias-temperature instability (BTI); Germanium-on-insulator (GOI); LaAlO; high; metal gate; three-dimensional (3-D);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.848130
