Title :
A 1.5-GHz 130-nm Itanium® 2 Processor with 6-MB on-die L3 cache
Author :
Rusu, Stefan ; Stinson, Jason ; Tam, Simon ; Leung, Justin ; Muljono, Harry ; Cherkauer, Brian
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
This 130-nm Itanium 2 processor implements the explicitly parallel instruction computing (EPIC) architecture and features an on-die 6-MB 24-way set-associative level-3 cache. The 374-mm2 die contains 410 M transistors and is implemented in a dual-Vt process with six Cu interconnect layers and FSG dielectric. The processor runs at 1.5 GHz at 1.3 V and dissipates a maximum of 130 W. This paper reviews circuit design and package details, power delivery, the reliability, availability, and serviceability (RAS) features, design for test (DFT), and design for manufacturability (DFM) features, as well as an overview of the design and verification methodology. The fuse-based clock deskew circuit achieves 24-ps skew across the entire die, while the scan-based skew control further reduces it to 7 ps. The 128-bit front-side bus has a bandwidth of 6.4 GB/s and supports up to four processors on a single bus.
Keywords :
CMOS digital integrated circuits; cache storage; design for manufacture; design for testability; integrated circuit design; integrated circuit packaging; integrated circuit reliability; low-power electronics; microprocessor chips; parallel architectures; 1.3 V; 1.5 GHz; 128-bit front-side bus; 130 W; 130 nm; 6 MB; 6.4 GB/s; Cu; Cu interconnect layers; FSG dielectric; Itanium 2 Processor; availability; circuit design; clock distribution; design for manufacturability; design for test; fuse-based clock deskew circuit; on-die L3 cache; package details; parallel instruction computing architecture; power delivery; power dissipation; power reduction; reliability; scan-based skew control; serviceability; set-associative level-3 cache; verification methodology; Availability; Circuit synthesis; Circuit testing; Computer aided instruction; Computer architecture; Concurrent computing; Design for testability; Dielectrics; Integrated circuit interconnections; Packaging;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2003.818293