Title :
Multiple wavelength vertical-cavity laser array employing molecular beam epitaxy regrowth
Author :
Wipiejewski, T. ; Ko, J. ; Thibeault, B.J. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
2/15/1996 12:00:00 AM
Abstract :
Multiple wavelength 4×2 vertical cavity laser diode arrays with 30 μm pitch exhibit a 17 nm wavelength span. The wavelength distribution is arbitrary within the 2-D array. The laser elements feature singlemode emission with submilliamp threshold currents
Keywords :
molecular beam epitaxial growth; optical communication equipment; semiconductor growth; semiconductor laser arrays; surface emitting lasers; 2D array; 30 micron; laser elements; molecular beam epitaxy regrowth; multiple wavelength laser; singlemode emission; submilliamp threshold currents; vertical-cavity laser array; wavelength distribution; wavelength span;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960198
