Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions

Author

Musseau, O. ; Leray, J.L. ; Ferlet, V. ; Umbert, A. ; Coïc, Y.M. ; Hesto, P.

Author_Institution

Centre d´´Etudes de Bruyeres le Chatel, France

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1226

Lastpage

1233

Abstract

The authors have investigated with both experimental and numerical methods (Monte Carlo and drift-diffusion model) various charge collection mechanisms in NMOS/SOI transistors irradiated by single energetic heavy ions. Physical interpretations of data emphasize the influence of various parasitic structures of the device. Two charge collection mechanisms are detailed: substrate funneling in the buried MOS capacitor and latching of the parasitic bipolar transistor

Keywords

Monte Carlo methods; insulated gate field effect transistors; ion beam effects; semiconductor device models; semiconductor device testing; semiconductor-insulator boundaries; Monte Carlo; NMOS/SOI transistors; buried MOS capacitor; charge collection mechanisms; drift-diffusion model; energetic heavy ions; ion irradiation; numerical methods; parasitic bipolar transistor latching; parasitic structures; substrate funneling; CMOS technology; Current measurement; Degradation; MOS capacitors; MOS devices; MOSFETs; Radiation hardening; Silicon on insulator technology; Space technology; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124097

Filename

124097