Performance of InGaN-GaN LEDs fabricated using glue bonding on 50-mm Si substrate

Author

Peng, Wei Chih ; Wu, YewChung Sermon

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu

Volume

18

Issue

4

fYear

2006

Firstpage

613

Lastpage

615

Abstract

Vertical InGaN-GaN light-emitting diodes (LEDs) epitaxial films were successfully fabricated on a 50-mm Si substrate using glue bonding and laser liftoff technology. A high-temperature stable organic film, rather than a solder metal, was used as the bonding agent. It was found that the light output of the vertical InGaN LED chip exceeded that of the conventional sapphire-substrate LEDs by about 20% at an injection current of 20 mA. The vertical InGaN LEDs operated at a much higher injection forward current (280 mA) than sapphire-substrate LEDs (180 mA). The radiation pattern of the vertical InGaN LEDs is more symmetrical than that of the sapphire-substrate LEDs. Furthermore, the vertical InGaN LEDs remain highly reliable after 1000 h of testing

Keywords

bonding processes; gallium compounds; indium compounds; laser materials processing; light emitting diodes; optical fabrication; semiconductor device reliability; semiconductor device testing; semiconductor epitaxial layers; 1000 h; 180 mA; 280 mA; 50 mm; InGaN-GaN; InGaN-GaN LED; Si; epitaxial films; glue bonding; injection forward current; laser liftoff; organic film; reliability testing; sapphire-substrate LED; Bonding; Electrodes; Gallium nitride; Indium tin oxide; Light emitting diodes; Optical films; Rough surfaces; Semiconductor films; Substrates; Surface roughness; Glue bonding; InGaN–GaN; laser liftoff; light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.870190

Filename

1588981