1.3-μm InAs quantum-dot laser with high dot density and high uniformity

Author

Amano, Tetsuo ; Sugaya, T. ; Komori, K.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki

Volume

18

Issue

4

fYear

2006

Firstpage

619

Lastpage

621

Abstract

We realized a triple-stacked 1.3-mum InAs quantum dot (QD) with a high density of 2.4times10¹¹ cm^-2 and a high uniformity of below 24 meV that employs an As₂ source and a gradient composition (GC) strain-reducing layer (SRL) grown on a GaAs substrate. We demonstrated the 1.3-mum wavelength emission of this triple-stacked QD laser with a 0.92-mm cavity length and a cleaved facet at room temperature. In addition, we realized the highest maximum modal gain yet reported of 8.1 cm^-1 per QD layer at beyond 1.28 mum by using our high-density and high-uniformity QD

Keywords

III-V semiconductors; indium compounds; laser cavity resonators; laser transitions; quantum dot lasers; 0.92 mm; 1.3 mum; InAs; InAs quantum-dot laser; cavity length; cleaved facet; gradient composition strain-reducing layer; modal gain; Gallium arsenide; Indium gallium arsenide; Optical design; Optical materials; Quantum dot lasers; Scanning electron microscopy; Semiconductor lasers; Substrates; Temperature; US Department of Transportation; 1.3-; As; gradient composition strain-reduced layer (GC-SRL); high modal gain; high-density quantum dot (QD);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.870143

Filename

1588983