Title :
Charge buildup at high dose and low fields in SIMOX buried oxides
Author :
Boesch, H. Edwin, Jr. ; Taylor, Thomas L. ; Brown, George A.
Author_Institution :
Harry Diamond Lab., Adelphi, MD, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Trapped charge buildup was measured and modeled as a function of dose and applied oxide field, εox, for a representative SIMOX (separation by implantation of oxygen) buried oxide. The dominant physical processes controlling the buildup are shown to be space-charge-driven modification of εox and recombination of electrons with trapped holes in low-field regions of the oxide
Keywords :
electron beam effects; electron-hole recombination; hole traps; ion implantation; metal-insulator-semiconductor devices; semiconductor-insulator boundaries; space charge; BOX MOS capacitors; SIMOX buried oxides; SOI technology; Si-SiO2; Si:O; electron irradiation; high dose; low-field regions; space-charge-driven modification; trapped charge buildup; trapped hole electron recombination; Charge carrier processes; Charge measurement; Current measurement; Electron traps; Insulation; Particle measurements; Process control; Silicon on insulator technology; Space charge; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
