Title :
Analysis of gain in determining T0 in 1.3 μm semiconductor lasers
Author :
Ackerman, David A. ; Shtengel, Gleb E. ; Hybertsen, Mark S. ; Morton, Paul A. ; Kazarinov, Rudolf F. ; Tanbun-Ek, T. ; Logan, R.A.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
Rapid decrease of differential gain has been determined to dominate the temperature dependence of threshold current in 1.3-μm multiquantum well and bulk active lasers giving rise to low values of T 0. Extensive experimental characterization of each type of device is described. Results are presented for the dependence of gain on chemical potential and carrier density as a function of temperature. The data indicate the important role of the temperature-insensitive, carrier density dependent chemical potential in determining differential gain. Modeling of the temperature dependence of threshold carrier density in MQW and bulk active lasers based on a detailed band theory calculation is described. The calculated value of T0 depends on the structure of the active layer, e.g., multiquantum well versus bulk. However, the calculated values are substantially higher than measured
Keywords :
band theory; carrier density; chemical potential; laser theory; quantum well lasers; semiconductor lasers; 1.3 μm semiconductor lasers; 1.3 mum; active layer structure; band theory calculation; bulk active lasers; carrier density; carrier density dependent chemical potential; chemical potential; differential gain; low values; multiquantum well; temperature dependence; temperature-insensitive; threshold carrier density; threshold current; Charge carrier density; Chemical lasers; Costs; Fiber lasers; Laser modes; Quantum well devices; Radiative recombination; Semiconductor lasers; Temperature dependence; Threshold current;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401204
