• DocumentCode
    816415
  • Title

    Room-temperature continuous-wave operation of blue-green CdZnSSe/ZnSSe quantum well laser diodes

  • Author

    Law, K.K. ; Baude, P.F. ; Miller, T.J. ; Haase, M.A. ; Haugen, G.M. ; Smekalin, K.

  • Author_Institution
    Photonics Res. Lab., 3M Center, St. Paul, MN, USA
  • Volume
    32
  • Issue
    4
  • fYear
    1996
  • fDate
    2/15/1996 12:00:00 AM
  • Firstpage
    345
  • Lastpage
    346
  • Abstract
    Room temperature continuous wave operation of CdZnSSe/ZnSSe quantum well laser diodes based on wide-gap II-VI semiconductors with lifetimes >3 h has been demonstrated. The density of stacking faults and threading dislocations present inside the laser diodes is ~5×104/cm2. Laser emission was observed at a wavelength of ~529 nm with a threshold current density of ~460 A/cm2 and a threshold voltage of ~5 V in index-guided CdZnSSe/ZnSSe/MgZnSSe separate-confinement heterostructure laser diodes
  • Keywords
    II-VI semiconductors; cadmium compounds; dislocation density; quantum well lasers; wide band gap semiconductors; zinc compounds; 5 V; 529 nm; CdZnSSe-ZnSSe; quantum well laser diodes; room-temperature continuous-wave operation; separate-confinement heterostructure; stacking fault density; threading dislocation density; threshold current density; threshold voltage; wide-gap II-VI semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960249
  • Filename
    490961
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=816415