Title :
1.3-μm GaInAsP/InP transverse-mode stabilized buried-crescent lasers by a new fabrication technique using a reactive ion beam etching
Author :
Kasukawa, Akihiko ; Iwase, Masayuki ; Matsumoto, Narihito ; Makino, Toshihiko ; Kashiwa, Susumi
Author_Institution :
Furakawa Electr. Co. Ltd., Yokohama, Japan
fDate :
12/1/1989 12:00:00 AM
Abstract :
Transverse-mode-stabilized, 1.3-μm, GaInAsP/InP, buried-crescent (BC) lasers fabricated using a reactive ion beam etching (RIBE) technique are presented. Yields of single-transverse-mode operation as high as 95% are achieved with low threshold currents of 11-25 mA. Transverse-mode stability under both high-power and long-term operation (50°C, 20 mW, 1000 h) is demonstrated. A coupling efficiency into a single-mode fiber of 63% and a coupled power of 40 mW at 160 mA are achieved. Stable continuous-wave operation is also confirmed under a constant power of 5 mW (50 and 70°C) and 20 mW (50°C) in an aging test
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; sputter etching; 1.3 micron; 1000 h; 11 to 25 mA; 160 mA; 20 mW; 40 mW; 5 mW; 50 degC; 63 percent; 70 degC; III-V semiconductor; aging test; coupled power; coupling efficiency; fabrication technique; long-term operation; reactive ion beam etching; single-mode fiber; single-transverse-mode operation; stable continuous wave operation; threshold currents; transverse mode stabilized GaInAsP-InP buried crescent lasers; Dry etching; Fiber lasers; Indium phosphide; Ion beams; Laser modes; Laser stability; Optical device fabrication; Plasma temperature; Reproducibility of results; Wet etching;
Journal_Title :
Lightwave Technology, Journal of
