Title :
Thermal annealing of trapped holes in SIMOX buried oxides
Author :
Pennise, Christine A. ; Boesch, H. Edwin, Jr.
Author_Institution :
Harry Diamond Lab., Adelphi, MD, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
The thermal detrapping of radiation-generated trapped holes in SIMOX (separation by implantation of oxygen) buried oxides has been investigated with an isothermal anneal experiment. Recovery from the radiation damage exhibits Arrhenius behavior; the recovery times vary exponentially as a function of inverse temperature. Activation energies range from about 0.45 to 1.65 eV, indicating probable thermal detrapping of holes from a broad distribution in hole trap depths. The high activation energies are an indication that some of the holes are deeply trapped in the oxide
Keywords :
X-ray effects; annealing; hole traps; ion implantation; metal-insulator-semiconductor devices; photoconductivity; semiconductor-insulator boundaries; Arrhenius behavior; MOS BOX capacitors; SIMOX buried oxides; SOI technology; Si-SiO2; Si:O; X-ray irradiation; high activation energies; hole trap depths; isothermal anneal; photoconduction current; radiation damage; radiation-generated trapped holes; recovery times; thermal detrapping; Annealing; Capacitance-voltage characteristics; Isothermal processes; MOS capacitors; Monitoring; Photoconductivity; Radiation effects; Silicon on insulator technology; Temperature; Tunneling;
Journal_Title :
Nuclear Science, IEEE Transactions on
