Title :
Electron spin resonance study of E´ trapping centers in SIMOX buried oxides
Author :
Conley, John F. ; Lenahan, P.M. ; Roitman, P.
Author_Institution :
Dept. of Eng. Sci., Pennsylvania State Univ., University Park, PA, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Electron spin resonance and capacitance versus voltage measurements are combined with vacuum ultraviolet and ultraviolet illumination sequences to study E´ centers in a variety of SIMOX buried oxides. The oxides had all been annealed above 1300°C. The results clearly show that E´ centers play an important, probably dominating role in the trapping behavior of these oxides. This role is considerably different from the role that E´ centers play in thermal oxides
Keywords :
annealing; hole traps; ion implantation; paramagnetic resonance of defects; point defects; radiation effects; semiconductor-insulator boundaries; C-V characteristics; E´ trapping centers; ESR; SIMOX buried oxides; SOI technology; Si-SiO2; Si:O; annealing; oxide trapping; ultraviolet illumination; vacuum UV irradiation; Annealing; Capacitance; Electron traps; Lighting; NIST; Paramagnetic resonance; Silicon on insulator technology; Temperature; Vacuum technology; Voltage measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
