Title :
Numerical Study of the Turnoff Behavior of High-Voltage 4H-SiC IGBTs
Author :
Tamaki, Tomohiro ; Walden, Ginger G. ; Sui, Yang ; Cooper, James A.
Author_Institution :
Renesas Technol. Corp., Takasaki
Abstract :
The turnoff behavior of high-voltage 4H-SiC p-channel insulated gate bipolar transistors is investigated by 2-D numerical simulations. Minority carrier lifetime in the nonpunch-through buffer layer is found to be the major factor determining switching loss.
Keywords :
carrier lifetime; insulated gate bipolar transistors; minority carriers; numerical analysis; silicon compounds; wide band gap semiconductors; 2-D numerical simulations; SiC; high-voltage IGBT; minority carrier lifetime; p-channel insulated gate bipolar transistors; switching loss; turnoff behavior; Buffer layers; Cathodes; Charge carrier lifetime; Circuit simulation; Frequency; Insulated gate bipolar transistors; Numerical simulation; Power dissipation; Silicon carbide; Voltage; 4H-SiC; IGBT; turnoff;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.926594
