• DocumentCode
    816594
  • Title

    Numerical Study of the Turnoff Behavior of High-Voltage 4H-SiC IGBTs

  • Author

    Tamaki, Tomohiro ; Walden, Ginger G. ; Sui, Yang ; Cooper, James A.

  • Author_Institution
    Renesas Technol. Corp., Takasaki
  • Volume
    55
  • Issue
    8
  • fYear
    2008
  • Firstpage
    1928
  • Lastpage
    1933
  • Abstract
    The turnoff behavior of high-voltage 4H-SiC p-channel insulated gate bipolar transistors is investigated by 2-D numerical simulations. Minority carrier lifetime in the nonpunch-through buffer layer is found to be the major factor determining switching loss.
  • Keywords
    carrier lifetime; insulated gate bipolar transistors; minority carriers; numerical analysis; silicon compounds; wide band gap semiconductors; 2-D numerical simulations; SiC; high-voltage IGBT; minority carrier lifetime; p-channel insulated gate bipolar transistors; switching loss; turnoff behavior; Buffer layers; Cathodes; Charge carrier lifetime; Circuit simulation; Frequency; Insulated gate bipolar transistors; Numerical simulation; Power dissipation; Silicon carbide; Voltage; 4H-SiC; IGBT; turnoff;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2008.926594
  • Filename
    4578888
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=816594