DocumentCode
8166
Title
Compensated Readout for High-Density MOS-Gated Memristor Crossbar Array
Author
Zidan, Mohammed Affan ; Omran, Hesham ; Sultan, Ahmed ; Fahmy, Hossam A. H. ; Salama, Khaled N.
Author_Institution
King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia
Volume
14
Issue
1
fYear
2015
fDate
Jan. 2015
Firstpage
3
Lastpage
6
Abstract
Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.
Keywords
MIS devices; leakage currents; memristors; readout electronics; array density; compensated readout technique; high-density MOS-gated memristor crossbar array; memory readout process; power consumption; tradeoff analysis; transistor leakage-current effect; Arrays; Capacitors; Leakage currents; Logic gates; Memristors; Noise; Transistors; Crossbar; Leakage Current; Memory; Memristor; leakage current; memory; memristor;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2014.2363352
Filename
6933920
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