Title :
The Effect of Gate Oxide Processes on the Performance of 4H-SiC MOSFETs and Gate-Controlled Diodes
Author :
Wang, Y. ; Tang, Ke ; Khan, Tahir ; Koushik Balasubramanian, Mahalingam ; Naik, Harsh ; Wang, Wei ; Chow, T.P.
Author_Institution :
Centre for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY
Abstract :
The effect of different gate oxide processes on the performance of 4H-SiC MOSFETs has been studied. These processes include different gate oxide depositions (high-temperature oxide, low-temperature oxide, and plasma-enhanced chemical vapor deposition oxide) and annealing processes (oxygen, NO, and ). Various MOS device parameters, particularly, threshold voltage, subthreshold slope, field-effect electron mobility, sheet electron carrier concentration, and Hall mobility, are correlated with various process steps.
Keywords :
Hall mobility; MOSFET; semiconductor diodes; silicon compounds; wide band gap semiconductors; 4H-SiC MOSFET; Hall mobility; MOS device parameters; SiC; annealing processes; field-effect electron mobility; gate oxide depositions; gate oxide processes; gate-controlled diodes; sheet electron carrier concentration; subthreshold slope; threshold voltage; Annealing; Charge carrier processes; Chemical vapor deposition; Diodes; Electron mobility; MOS devices; MOSFETs; Plasma chemistry; Plasma devices; Threshold voltage; 4H-SiC; Field-effect mobility; gate oxide process; threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.926674
