Anisotropy of Carrier Transport in the Active Region of Lasers With Self-Assembled InAs Quantum Dashes

Author

Popescu, Dan P. ; Malloy, Kevin J.

Author_Institution

Inst. for Biodiagnostics, Nat. Res. Council of Canada, Winnipeg, Man.

Volume

18

Issue

22

fYear

2006

Firstpage

2401

Lastpage

2403

Abstract

Ambipolar carrier migration is investigated for the first time by probing with submicrometer spatial resolution the photoluminescence emitted from the active region of an InAs quantum-dash laser grown on InP. Pumping the nanostructure with two wavelengths, 880 and 940 nm, helps to better understand the transport patterns and the role of the InP substrate. The migration parallel with the dash layer is studied in two directions: along the dash elongation and perpendicular to (across) the elongation. Besides an overall quenching in the presence of dashes, a 20% reduction in migration is observed for the along direction when compared to the across one

Keywords

III-V semiconductors; indium compounds; optical pumping; photoluminescence; quantum dot lasers; radiation quenching; InAs; InAs quantum dash laser; InP; InP substrate; carrier transport anisotropy; photoluminescence; quenching; self-assembly; Anisotropic magnetoresistance; Atomic force microscopy; Atomic layer deposition; Indium phosphide; Laser tuning; Monitoring; Photoluminescence; Pump lasers; Quantum dot lasers; Quantum dots; Carrier migration; confocal microscopy; quantum-dash (QDASH) lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.886142

Filename

4012067