Title :
Radiation-hardened phototransistor
Author :
Matzen, W.T. ; Hawthorne, R.A. ; Kilian, W.T.
Author_Institution :
Micro Switch Div., Honeywell Inc., Richardson, TX, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
A radiation-hardened, monolithic, silicon bipolar phototransistor has been developed and produced. Common emitter current gain at 2 mA collector current is 225 and remains above 140 after irradiation of 1 E13 n/sq cm or 1 Mrad(Si). Device photoresponse to 820 nm light decreases about 30% after 1 Mrad(Si) exposure and 55% after 1 E13 n/sq cm irradiation for typical input light levels. This phototransistor is ideal for applications requiring a radiation-hardened optocoupler
Keywords :
bipolar transistors; elemental semiconductors; phototransistors; radiation hardening (electronics); silicon; 106 rad; 2 mA; 820 nm; Si; collector current; photoresponse; radiation-hardened optocoupler; semiconductors; Absorption; Detectors; Impurities; Neutrons; Photodiodes; Phototransistors; Radiation hardening; Silicon; Substrates; Switches;
Journal_Title :
Nuclear Science, IEEE Transactions on
