DocumentCode
816692
Title
1.3- 
m InGaAlAs Short-Cavity DBR Lasers for Uncooled 10-Gb/s Operation With Low Drive Current
Author
Shinoda, Kazunori ; Kitatani, Takeshi ; Aoki, Masahiro ; Mukaikubo, Masaru ; Uchida, Kenji ; Uomi, Kazuhisa
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo
Volume
18
Issue
22
fYear
2006
Firstpage
2383
Lastpage
2385
Abstract
We present a novel 1.3-mum laser, a short-cavity distributed-Bragg-reflector (DBR) laser that enables uncooled, 10-Gb/s operation with low drive currents. The laser consists of a short InGaAlAs multiple-quantum-well active region butt-jointed to an InGaAsP-DBR region. A fabricated laser with a 75-mum active region demonstrated 100 degC, 10-Gb/s operation at a record low drive current of 14-mA peak-to-peak (mAp-p) with an average output power of -3 dBm
Keywords
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical communication equipment; optical fabrication; quantum well lasers; 1.3 mum; 10 Gbit/s; 100 degC; 14 mA; 75 mum; InGaAlAs; InGaAlAs multiple-quantum-well active region; InGaAlAs short-cavity DBR lasers; InGaAsP; InGaAsP-DBR region; distributed-Bragg-reflector laser; Distributed Bragg reflectors; Drives; Power generation; Power lasers; Quantum well devices; Space heating; Space technology; Surface emitting lasers; Temperature distribution; Vertical cavity surface emitting lasers; Distributed Bragg reflector (DBR); InGaAlAs; laser; short cavity;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2006.886147
Filename
4012068
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