Title :
Characteristics of 1.3-μm InGaAsP lasers used as photodetectors
Author :
Van Der Ziel, Jan P.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
2/1/1989 12:00:00 AM
Abstract :
The photodetection capabilities of 1.3-μm channel substrate lasers are studied. The diodes can be used either as lasers or detectors in single-mode-fiber half-duplex communication links. As a detector, a responsivity of 0.26 A/W is obtained by efficiently coupling the input radiation into the facet using a lensed single-mode fiber. The spectral bandwidth extends from 1.1 to 1.37 μm. The dark current at room temperature is 200 nA at 1-V bias and due in part to current leakage through the Fe-doped InP blocking layer. As lasers, the diodes have a frequency response of 4 GHz, and as detectors, the 3-dB bandwidth is 600 MHz
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; photodetectors; semiconductor junction lasers; 1.1 to 1.37 micron; 1.3 micron; 200 nA; 4 GHz; 600 MHz; InGaAsP lasers; channel substrate lasers; dark current; half-duplex communication links; photodetectors; responsivity; semiconductors; Bandwidth; Dark current; Diodes; Face detection; Fiber lasers; Indium phosphide; Optical fiber communication; Photodetectors; Radiation detectors; Temperature;
Journal_Title :
Lightwave Technology, Journal of
