Characteristics of 1.3-μm InGaAsP lasers used as photodetectors

Author

Van Der Ziel, Jan P.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

7

Issue

2

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

347

Lastpage

352

Abstract

The photodetection capabilities of 1.3-μm channel substrate lasers are studied. The diodes can be used either as lasers or detectors in single-mode-fiber half-duplex communication links. As a detector, a responsivity of 0.26 A/W is obtained by efficiently coupling the input radiation into the facet using a lensed single-mode fiber. The spectral bandwidth extends from 1.1 to 1.37 μm. The dark current at room temperature is 200 nA at 1-V bias and due in part to current leakage through the Fe-doped InP blocking layer. As lasers, the diodes have a frequency response of 4 GHz, and as detectors, the 3-dB bandwidth is 600 MHz

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser transitions; photodetectors; semiconductor junction lasers; 1.1 to 1.37 micron; 1.3 micron; 200 nA; 4 GHz; 600 MHz; InGaAsP lasers; channel substrate lasers; dark current; half-duplex communication links; photodetectors; responsivity; semiconductors; Bandwidth; Dark current; Diodes; Face detection; Fiber lasers; Indium phosphide; Optical fiber communication; Photodetectors; Radiation detectors; Temperature;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.17778

Filename

17778