• DocumentCode
    816751
  • Title

    Radiation damage assessment of Nb tunnel junction devices

  • Author

    King, Steven E. ; Magno, Richard ; Maisch, William G.

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • Volume
    38
  • Issue
    6
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    1359
  • Lastpage
    1364
  • Abstract
    The radiation hardness of a new technology using Josephson junctions was explored by an irradiation using a fluence of 7.6×10 14 protons/cm2 at an energy of 63 MeV from the U.C. Davis cyclotron. In what may be the first radiation assessment of Nb/Al2O3/Nb devices, the permanent damage in these devices was investigated. No permanent changes in the I-V characteristics of the junctions were observed, indicating no significant level of material defects have occurred at this level of irradiation
  • Keywords
    niobium; radiation hardening (electronics); superconducting junction devices; 63 MeV; I-V characteristics; Josephson junctions; Nb tunnel junction devices; Nb-Al2O3-Nb; U.C. Davis cyclotron; fluence; level of irradiation; permanent damage; radiation damage assessment; radiation hardness; Critical current; Insulation; Josephson junctions; Niobium; Superconducting films; Superconducting integrated circuits; Thin film devices; Tunneling; Virtual manufacturing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.124117
  • Filename
    124117
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=816751