Title :
Radiation damage assessment of Nb tunnel junction devices
Author :
King, Steven E. ; Magno, Richard ; Maisch, William G.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
The radiation hardness of a new technology using Josephson junctions was explored by an irradiation using a fluence of 7.6×10 14 protons/cm2 at an energy of 63 MeV from the U.C. Davis cyclotron. In what may be the first radiation assessment of Nb/Al2O3/Nb devices, the permanent damage in these devices was investigated. No permanent changes in the I-V characteristics of the junctions were observed, indicating no significant level of material defects have occurred at this level of irradiation
Keywords :
niobium; radiation hardening (electronics); superconducting junction devices; 63 MeV; I-V characteristics; Josephson junctions; Nb tunnel junction devices; Nb-Al2O3-Nb; U.C. Davis cyclotron; fluence; level of irradiation; permanent damage; radiation damage assessment; radiation hardness; Critical current; Insulation; Josephson junctions; Niobium; Superconducting films; Superconducting integrated circuits; Thin film devices; Tunneling; Virtual manufacturing; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
