Title :
Radiation characteristics of SIPOS and polysilicon resistors
Author :
Axness, C.L. ; Riewe, L. ; Reber, R.A. ; Liang, A.Y. ; Ang, S.S. ; Brown, W.D.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
The radiation characteristics of polysilicon and SIPOS resistors are compared. SIPOS is being considered as a replacement material for polysilicon in feedback resistors in rad-hard ICs. Both materials show little change in resistivity to gamma radiation and are much more neutron-radiation resistant than bulk silicon
Keywords :
elemental semiconductors; gamma-ray effects; materials testing; neutron effects; radiation hardening (electronics); resistors; silicon; SIPOS resistors; feedback resistors; gamma-ray resistant; neutron-radiation resistant; polycrystalline Si resistors; polysilicon resistors; rad-hard ICs; radiation characteristics; Conductivity; Electrical resistance measurement; Feedback; Grain boundaries; Inductors; Neutrons; Radiation hardening; Resistors; Silicon; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
