Design of semiconductor electrooptic directional coupler with the beam propagation method

Author

Sansonetti, Pierre ; Caquot, Emmanuel C. ; Carenco, Alain

Author_Institution

Lab. de Bagneux, France

Volume

7

Issue

2

fYear

1989

Firstpage

385

Lastpage

389

Abstract

The design of a low-loss switching voltage double-heterostructure electrooptic coupler switch in III-V semiconductor materials is discussed. The optical propagation is analyzed by the effective index method combined with the beam propagation method. The electrostatic field and electron and hole distributions are analyzed by a numerical simulation. This model is in good agreement with experimental results obtained at 1.56 mu m on directional couplers made of GaAs-GaAlAs DH waveguides and Schottky barrier electrodes.<>

Keywords

directional couplers; electro-optical devices; optical couplers; optical design techniques; 1.56 micron; GaAs-GaAlAs; III-V semiconductor; Schottky barrier electrodes; directional coupler; directional couplers; effective index method; electron distributions; electrostatic field; hole distributions; low-loss switching voltage double-heterostructure electrooptic coupler switch; optical propagation; Charge carrier processes; Directional couplers; Electrostatic analysis; III-V semiconductor materials; Numerical simulation; Optical propagation; Optical switches; Optical waveguides; Semiconductor materials; Voltage;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.17784

Filename

17784