Title :
Analytical Modeling of High-Voltage 4H-SiC Junction Barrier Schottky (JBS) Rectifiers
Author :
Zhu, Lin ; Chow, T.P.
Author_Institution :
Power Integrations Inc., San Jose, CA
Abstract :
We develop a new analytical model for the junction barrier Schottky (JBS) rectifier and apply it to high-voltage 4H-SiC JBS rectifiers. This model uses a novel method to approximate the electric field at the Schottky contact, which is together with the Fowler-Nordheim tunneling equation to accurately calculate the reverse leakage current of a high-voltage 4H-SiC JBS rectifier. The forward on-resistance of a high-voltage 4H-SiC JBS rectifier consists of several components, which are dominated by the spreading resistances in the drift layer. Moreover, this model has been verified by comparing the simulation and experimental results, and they are shown to be in good agreement.
Keywords :
Schottky barriers; Schottky diodes; leakage currents; power semiconductor diodes; semiconductor device models; silicon compounds; solid-state rectifiers; tunnelling; Fowler-Nordheim tunneling equation; JBS rectifier; SiC; analytical model; drift layer; forward on-resistance; high-voltage 4H-SiC rectifiers; junction barrier Schottky rectifier; reverse leakage current; spreading resistances; Analytical models; Equations; Forward contracts; Leakage current; P-n junctions; Rectifiers; Schottky barriers; Silicon carbide; Tunneling; Voltage; 4H-SiC; High voltage; Schottky rectifier; junction barrier Schottky (JBS); model;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.926638
