Title :
Fabrication and characterization of an InGaAsP/InP active waveguide optical isolator with 14.7 dB/mm TE mode nonreciprocal attenuation
Author :
Shimizu, Hiromasa ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Japan
Abstract :
The authors have fabricated transverse electric (TE) mode InGaAsP/InP active waveguide optical isolators based on the nonreciprocal loss shift and demonstrated improved TE mode isolation ratio of 14.7 dB/mm with reduced insertion loss at a wavelength of 1550 nm for monolithically integrable optical isolators. The wavelength dependence of the isolation ratio and the propagation loss were also measured. An isolation ratio greater than 10 dB/mm was realized over the entire wavelength range of 1530-1560 nm. These results lead to the monolithic integration of semiconductor waveguide optical isolators with edge-emitting semiconductor lasers and highly functional photonic integrated circuits with many cascaded optical devices.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; monolithic integrated circuits; optical fabrication; optical isolators; optical losses; optical waveguide components; semiconductor lasers; 1530 to 1560 nm; InGaAsP-InP; InGaAsP-InP active waveguide; TE mode attenuation; TE mode isolation ratio; active waveguide optical isolator; cascaded optical devices; edge-emitting lasers; insertion loss; monolithic integration; nonreciprocal attenuation; nonreciprocal loss shift; optical isolator characterization; optical isolator fabrication; photonic integrated circuits; propagation loss; semiconductor lasers; semiconductor waveguide isolators; wavelength dependence; Indium phosphide; Insertion loss; Isolators; Optical attenuators; Optical device fabrication; Optical devices; Optical losses; Optical waveguides; Propagation losses; Tellurium; Fe; InGaAsP; nonreciprocal loss shift; photonic integrated circuit; semiconductor optical amplifiers; waveguide optical isolator;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2005.861135