Title :
Radiation evaluation of commercial ferroelectric nonvolatile memories
Author :
Benedetto, J.M. ; De Lancey, W.M. ; Oldham, T.R. ; McGarrity, J.M. ; Tipton, C.W. ; Brassington, M. ; Fisch, D.E.
Author_Institution :
Harry Diamond Lab., Adelphi, MD, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Ferroelectric (FE) on complementary metal-oxide-semiconductor (CMOS) 4-bit nonvolatile memories, 8-bit octal latches (with and without FE), and process control test chips were used to establish a baseline characterization of the radiation response of CMOS/FE integrated devices and to determine whether the additional FE processing caused significant degradation to the baseline CMOS process. Functional failure of all 4-bit memories and octal latches occurred at total doses of between 2 and 4 krad(Si), most likely due to field-oxide effects in the underlying CMOS. No significant difference was observed between the radiation response of devices with and without the FE film in this commercial process
Keywords :
CMOS integrated circuits; SRAM chips; ferroelectric storage; radiation hardening (electronics); 2×103 to 4×103 rad; 4 kbit; CMOS; baseline characterization; commercial memories; commercial process; ferroelectric nonvolatile memories; field-oxide effects; radiation hardness evaluation; radiation response; CMOS process; CMOS technology; Capacitors; Ferroelectric materials; Iron; Nonvolatile memory; Random access memory; Semiconductor films; Silicon; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
