DocumentCode :
816941
Title :
Metrology Challenges for Emerging Research Devices and Materials
Author :
Garner, C. Michael ; Vogel, Eric M.
Author_Institution :
Intel Corp., Santa Clara, CA
Volume :
19
Issue :
4
fYear :
2006
Firstpage :
397
Lastpage :
403
Abstract :
As silicon complimentary metal-oxide-semiconductor (CMOS) technology approaches its limits, new device structures and computational paradigms will be required to replace and augment standard CMOS devices for ULSI circuits. These possible emerging technologies span the realm from transistors made from silicon nanowires to heteroepitaxial layers for spin transistors to devices made from nanoscale molecules. One theme that pervades these seemingly disparate emerging technologies is that the electronic properties of these nanodevices are extremely susceptible to small perturbations in structural and material properties such as dimension, structure, roughness, and defects. The extreme sensitivity of the electronic properties of these devices to their nanoscale physical properties defines a significant need for precise accurate metrology. This paper will describe some of the most critical metrology required to characterize materials and devices in the research and exploratory stage and how these requirements would potentially change if these research devices were to start into a technology development effort
Keywords :
ULSI; interface phenomena; nanotube devices; semiconductor device measurement; silicon; CMOS technology; Si; ULSI circuits; computational paradigms; device structures; ferroelectric materials; ferromagnetic materials; heteroepitaxial layers; metrology challenges; molecular electronics; nanoscale molecules; nanotechnology measurement; precise accurate metrology; quantum dots; quantum wires; semiconductor device fabrication; silicon complimentary metal-oxide-semiconductor; silicon nanowires; spin transistors; Atomic measurements; CMOS technology; Ferroelectric materials; Metrology; Nanoscale devices; Quantum dots; Scanning electron microscopy; Semiconductor materials; Silicon; Spatial resolution; CMOSFETs; ferroelectric materials; ferromagnetic materials; molecular electronics; nanotechnology measurement; quantum dots; quantum wires; semiconductor device fabrication;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2006.884714
Filename :
4012092
Link To Document :
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