Ion induced charge collection in GaAs MESFETs and its effect on SEU vulnerability

Author

Hughlock, B. ; Williams, T. ; Johnston, A. ; Plaag, R.

Author_Institution

Boeing Def. & Space Group, Seattle, WA, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1442

Lastpage

1449

Abstract

An ion induced charge collection study, using an array of GaAs enhancement-mode MESFET geometries, has identified two primary excess charge collection effects, a fringe field effect and a gated channel effect. The introduction of a buried p-layer was found to suppress the fringe field effect, which resulted in a reduction in the maximum excess charge collected. The LET threshold for SEU was similar for both processes. For the devices used in this study, the results suggest that the gated channel effect is primarily responsible for the low SEU LET threshold

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion beam effects; semiconductor device testing; GaAs; LET threshold; buried p-layer; enhancement-mode MESFET geometries; excess charge collection effects; fringe field effect; gated channel effect; ion induced charge collection; Charge carrier processes; Electron mobility; Foundries; Gallium arsenide; Geometry; Implants; Latches; MESFETs; Space charge; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124130

Filename

124130