Title :
In Situ and Real-Time Monitoring of Plasma Process Chamber Component Qualities and Predictive Controlling of Wafer Yields
Author :
Lee, Szetsen ; Tien, Yu-Chung
Author_Institution :
Dept. of Chem., Chung Yuan Christian Univ., Taoyuan
Abstract :
Plasma interactions with chamber components and wafers in semiconductor manufacturing processes have been monitored with a fault detection technique. Not only can this diagnostic technique monitor the wafer and process chamber components qualities, but it also has potential in saving tremendous amounts of manufacturing costs and improving equipment productivity. We have discovered that the abnormality in certain plasma processing parameters detected in the early stages of a manufacturing line can have a strong correlation with the product yield. Possible reasons for the observed correlations are explained
Keywords :
inspection; integrated circuit yield; manufacturing processes; plasma materials processing; process monitoring; semiconductor device manufacture; automatic process control; chamber component; correlation coefficients; equipment productivity; fault detection; manufacturing costs; plasma process real-time monitoring; plasma processing parameters; product yield; reactive-ion etch; semiconductor manufacturing processes; wafer yield predictive control; Costs; Etching; Fault detection; Manufacturing processes; Monitoring; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Semiconductor device manufacture; ${V}_{rm pp}$; Automatic process control (APC); correlation coefficients; plasma; reactive-ion etch (RIE); yield;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2006.883595
