Title :
Electron Irradiated Bulk n-Type GaAs
Author :
Mattauch, Robert J. ; Healy, Michael P.
Author_Institution :
Department of Electrical Engineering University of Virginia Charlottesville, Virginia 22901
Abstract :
Bulk boat grown gallium arsenide doped to 1.7 × 1016 cm-3 with silicon was irradiated with 7 MeV electrons until the sample resistivity rose to the range 106 to 108 ohm-cm. Both resistivity versus temperature and Hall-effect versus temperature data indicate the presence of an acceptor-like level at Ec - .31 eV. Carrier removal was found to be approximately 2.3 × 10-3 cm-l and annealing was found to occur near 500 K.
Keywords :
Annealing; Boats; Conductivity; Electrons; Gallium arsenide; Laboratories; Radiation effects; Silicon; Temperature measurement; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1975.4327753
