High-speed 1.3 mu m GaInAs detectors fabricated on GaAs substrates

Author

Rogers, Dennis L. ; Woodall, Jerry M. ; Pettit, G.D. ; McInturff, D.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

9

Issue

10

fYear

1988

Firstpage

515

Lastpage

517

Abstract

High-speed interdigitated metal-semiconductor-metal detectors have been fabricated on non-lattice-matched, semi-insulating, GaAs substrates using two GaInAs layers of differing indium concentrations to accommodate most of the lattice mismatch by interface misfit dislocations. Bandwidths as high as 3 GHz were measured with none of the detrimental low-frequency gain usually observed in this type of device. This is attributed to the inhibition of the surface trapping of photoinduced carriers by a graded pseudomorphic layer at the surface.<>

Keywords

III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; metal-semiconductor-metal structures; optical communication equipment; photodetectors; 1.3 micron; 3 GHz; GaAs substrates; GaInAs-GaAs; III-V semiconductors; MSM type; Schottky barrier; graded pseudomorphic layer; high speed device; interdigitated type; metal-semiconductor-metal detectors; nonlattice matched substrates; optical communication; photodetectors; photoinduced carriers; semiinsulating substrates; surface trapping inhibition; Detectors; Gallium arsenide; Heterojunctions; High speed optical techniques; Indium gallium arsenide; Lattices; Optical surface waves; P-i-n diodes; Semiconductor materials; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.17829

Filename

17829