Title :
Quantitative comparison of single event upsets induced by protons and neutrons [RAM devices]
Author :
Normand, Eugene ; Stapor, William J. ; McNulty, Peter ; Abdel-Kader, W.G. ; Yaktieen, M.H.
Author_Institution :
Boeing Def. & Space Group, Seattle, WA, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
The SEU susceptibility of microchips induced by neutrons and protons has been examined on both experimental and theoretical grounds. Experimental energy deposition spectra in surface barrier detectors by 14 MeV neutrons are compared against theoretical predictions based on considering individual neutron reactions and using ENDF-V cross sections. These results are compared with recent SEU measurements on 3 RAM devices made separately with 67 MeV neutrons and protons
Keywords :
integrated circuit testing; integrated memory circuits; neutron effects; proton effects; random-access storage; 14 MeV; 67 MeV; ENDF-V cross sections; RAM devices; SEU susceptibility; energy deposition spectra; microchips; neutron irradiation; neutron reactions; proton irradiation; single event upsets; surface barrier detectors; Costs; Detectors; Energy measurement; Neutrons; Particle beam measurements; Particle beams; Protons; Silicon; Single event transient; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
